DMP3056LSD
10
1
0.1
T A = 150°C
0.01
T A = 125°C
T A = 85°C
0.001
T A = 25°C
T A = -55°C
0.0001
0
0.2 0.4 0.6 0.8 1 1.2
-V SD , SOURCE-DRAIN VOLTAGE (V)
Fig. 7 Reverse Drain Current vs. Source-Drain Voltage
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
SO-8
Dim
A
Min
-
Max
1.75
E1 E
A1
L
GAUGE PLANE
SEATING PLANE
A1
A2
A3
0.10
1.30
0.15
0.20
1.50
0.25
DETAIL    A
b
D
E
0.3
4.85
5.90
0.5
4.95
6.10
A2 A A3
h
45 °
7 °~ 9 °
DETAIL A
E1
e
h
L
3.85 3.95
1.27 Typ
- 0.35
0.62 0.82
e
D
b
θ 0 ° 8 °
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
Dimensions
X
Y
C1
Value (in mm)
0.60
1.55
5.4
Y
DMP3056LSD
Document number: DS31420 Rev. 7 - 2
C2
C1
4 of 5
www.diodes.com
C2
1.27
January 2014
? Diodes Incorporated
相关PDF资料
DMP3056LSS-13 MOSFET P-CH 30V 7.1A 8-SOIC
DMP3098L-7 MOSFET P-CH 30V 3.8A SOT23-3
DMP3098LDM-7 MOSFET P-CH 30V 4A SOT-26
DMP3098LSD-13 MOSFET P-CH 30V 4.4A 8-SOIC
DMP3098LSS-13 MOSFET P-CH 30V 5.3A 8-SOIC
DMP3105LVT-7 MOSFET P-CH 30V 3.1A TSOT26
DMP3130L-7 MOSFET P-CH 30V 3.5A SOT-23
DMP3160L-7 MOSFET P-CH 30V 2.7A SOT23-3
相关代理商/技术参数
DMP3056LSDQ-13 制造商:Diodes Incorporated 功能描述:DIODE - Tape and Reel
DMP3056LSS 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:SINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMP3056LSS-13 功能描述:MOSFET PMOS SINGLE P-CHANNL 30V 7.1A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMP3098L 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE MOSFET
DMP3098L-7 功能描述:MOSFET P-Channel 1.25W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMP3098LDM 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE MOSFET
DMP3098LDM-7 功能描述:MOSFET PMOS-SINGLE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMP3098LSD 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL P-CHANNEL ENHANCEMENT MODE MOSFET